Excitonic susceptibility in near triangular quantum wells

Diamagnetic susceptibility and binding energy of an exciton in a near triangular quantum well, with potential profile proportional to |z|2/3 composed of GaAs/Ga1−xAlxAs and ZnO/Zn1−xMgxO are calculated as a function of the wellwidth and concentration of Al and Mg respectively varying the magnetic field applied along growth direction (i.e. z-axis). Diamagnetic susceptibility of light hole exciton and heavy hole exciton, shows inverse behaviors in the two materials below 20 nm wellwidth and the binding energy of both excitons increases, as the magnetic field increases. The results obtained, are compared with those of quantum wells with varied potential profiles and the experimental results reported in the literature.