Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN

被引:0
|
作者
S. Yu. Davydov
机构
[1] St. Petersburg State Electrotechnical University,
来源
Semiconductors | 2002年 / 36卷
关键词
Experimental Data; Nitrate; Magnetic Susceptibility; Magnetic Material; Physical Parameter;
D O I
暂无
中图分类号
学科分类号
摘要
Estimation of dielectric, optical, electrooptical, magnetic, elastic, photoelastic, piezoelectric, and phonon characteristics of XN (X=B, Al, Ga, In) crystals is performed by simple methods using quantum-mechanical and semiempirical approaches. The values of deformation potentials and magnetic susceptibilities are determined. The results of calculations are compared with the available experimental data and the calculations of other authors.
引用
收藏
页码:41 / 44
页数:3
相关论文
共 37 条
  • [31] Optical, magnetic, and transport properties of two-dimensional III-nitride semiconductors (AlN, GaN, and InN) due to acoustic phonon scattering
    Dan, Ho Kim
    Vinh, Pham Tuan
    Hien, Nguyen Dinh
    NANOSCALE ADVANCES, 2024, 6 (24): : 6253 - 6264
  • [32] A DFT study on physical properties of III-V compounds (AlN, GaN, AlP, and GaP) in the P3121 phase
    Zhang, Zheren
    Chai, Changchun
    Song, Yanxing
    Kong, Linchun
    Yang, Yintang
    MATERIALS RESEARCH EXPRESS, 2021, 8 (02)
  • [33] Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
    Goano, M
    Bellotti, E
    Ghillino, E
    Ghione, G
    Brennan, KF
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6467 - 6475
  • [34] Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method
    Ha, Ju-Hyung
    Wang, Juan
    Lee, Won-Jae
    Choi, Young-Jun
    Lee, Hae-Yong
    Kim, Jung-Gon
    Harima, Hiroshi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (06) : 994 - 1000
  • [35] Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method
    Ju-Hyung Ha
    Juan Wang
    Won-Jae Lee
    Young-Jun Choi
    Hae-Yong Lee
    Jung-Gon Kim
    Hiroshi Harima
    Journal of the Korean Physical Society, 2015, 66 : 994 - 1000
  • [36] Unravelling the adsorption performance of BN, AlN, GaN and InN 2D nanosheets towards the ciclopirox, 5-fluorouracil and nitrosourea for anticancer drug delivery motive: A DFT-D with QTAIM, PCM and COSMO investigations
    Ahmed, Tanvir
    Rahman, Md. Aminur
    Islam, Rafiqul
    Piya, Afiya Akter
    Shamim, Siraj Ud Daula
    COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2022, 1214
  • [37] Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition
    Zheng, Xia-Xi
    Wang, Chun
    Huang, Jian-Hao
    Huang, Jen-Yao
    Ueda, Daisuke
    Pande, Krishna
    Dee, Chang Fu
    Lee, Ching Ting
    Chang, Edward-Yi
    THIN SOLID FILMS, 2022, 754