Electrical conductivity of BaTi4O9 film prepared by laser chemical vapor deposition method

被引：0
|
作者：
Dongyun Guo
Takashi Goto
Chuanbin Wang
Qiang Shen
Lianmeng Zhang
机构：
[1] Wuhan University of Technology,State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering
[2] Tohoku University,Institute for Materials Research
来源：
Applied Physics A | 2012年 / 107卷
关键词：
Oxygen Vacancy; Impedance Spectroscopy; Microwave Dielectric Property; Equivalent Circuit Model; Cole Plot;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A BaTi4O9 film was prepared on a Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method and was investigated by impedance spectroscopy over ranges of temperature (300–1073 K) and frequency (102–107 Hz). Plots between real and imaginary parts of the impedance (Z′ and Z′′) suggest the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The conduction of both grains and grain boundaries obeys the Arrhenius format with activation energies of respectively 1.45 and 1.24 eV. The close activation energies indicate that the conduction in BaTi4O9 film is mainly by oxygen vacancies.
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页码：739 / 742
页数：3
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