Short-wavelength infrared focal plane array based on type-II InAs/GaSb superlattice

被引：0

作者：

Xiaodong Chen

Xiancun Cao

Liang Zhang

Lixue Zhang

Yingjie He

机构：

[1] Xidian University,

[2] Luoyang Optoelectro Technology Development Center,undefined

来源：

Optical and Quantum Electronics | 2016年 / 48卷

关键词：

InAs/GaSb type-II superlattice; Focal plane array; Short-wavelength infrared imager;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Type-II InAs/GaSb superlattices are now excellent candidates for third generation IR imagers. In this paper, a 128 × 128 short-wavelength infrared focal plane array using MBE grown Type-II InAs/GaSb superlattice was reported. Each pixel was a conventional PIN mesa structure with a size of 42 μm × 42 μm, and the distance between adjacent pixels was 50 μm. The detector had a peak response wavelength of 2.8 μm and a peak detectivity of 1.3 × 1011 cm Hz1/2W−1, with a R0A value of 2.0 × 106Ω cm2 and a quantum efficiency of 35 %. A prototype infrared imager with the focal plane array working at 77 K was demonstrated. And its operability was better than 91 % and its response dispersion less than 10 %.

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