Impact of Variable Thermal Conductivity of Thermal-Plasma-Mechanical Waves on Rotational Microelongated Excited Semiconductor

In the presented work, the propagation of thermal-plasma-mechanical waves of an elastic microelongated semiconductor medium is studied. A novel model describes the interference between waves under the influence of a rotational field when the medium’s thermal conductivity is variable. Thermal conductivity is selected based on the temperature when the microelongated semiconductor medium is in an excited state. The microelongation parameters of the medium are taken into account according to the microelement transport processes for the micropolar-photo-thermoelasticity theory. The governing equations are investigated in two dimensions (2D) when the main quantities are taken dimensionless. To add, harmonic wave analysis is employed to obtain complete analytical solutions of the main physical fields when some boundary conditions are chosen at the medium surface. The influence of physical fields variables is analyzed and illustrated graphically for silicon (Si) material in different values of variable thermal conductivity, thermal relaxation times and rotation parameters.