The creep behavior of Si3N4/SiC nanocomposites

被引：0
作者：
Julin Wan
Amiya K. Mukherjee
机构：
[1] the University of California-Davis,the Department of Chemical Engineering and Materials Science
来源：
JOM | 2003年 / 55卷
关键词：
Silicon Carbide; Creep Rate; Silicon Nitride; Spark Plasma Sinter; Creep Behavior;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In an investigation of the creep properties of silicon nitride/silicon carbide nanocomposites, the micro-nano type composites with nano-SiC at intragranular and inter-granular regions show behavior not much different from that of silicon-nitride monolith. The improvement of creep resistance is modest, up to about one order of magnitude decrease in steady-state creep rate. The creep rate parameters such as activation energy and stress exponent measured for this type of nanocomposite are within the range of those of silicon nitride. This evidence suggests that a special strengthening mechanism may not be necessary for this type of material. Nano-nanocomposites show remarkably lower creep rates, possibly pointing to a new creep mechanism such as solid-state diffusion.
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页码：28 / 33
页数：5
相关论文
共 44 条
  • [1] Takahashi T.(1994)SiO Key Eng. Mater. 89–91 225-228
  • [2] Hockey B.J.(1991) Doped Si J. Mater. Sci. 26 3931-3939
  • [3] Niihara K.(1989)N J. Jpn. Soc. Powder & Powder Metall. 36 243-247
  • [4] Niihara K.(1991) Ceramics J. Ceram. Soc. Jpn. 99 974-982
  • [5] Niihara K.(1993)Tensile Creep of Whisker Reinforced Silicon Nitride Mat. Res. Soc. Symp. Proc. 286 405-412
  • [6] Nakahira A.(1998)Nanostructure and Thermomechanical Properties of Si J. Am. Ceram. Soc. 81 1095-1108
  • [7] Seiko T.(1995)N Mat. Res. Symp. Proc. 365 113-113
  • [8] Herrmann M.(1990)/SiC Composites Fabricated from S-C-N Precursor Powders J. Mater. Sci. Lett. 9 598-599
  • [9] Yamada K.(1990)New Concept of Structural Ceramics—Ceramic Nanocomposites J. Mater. Sci. Lett. 10 112-114
  • [10] Kamiya N.(1996)New Nanocomposite Structural Ceramics J. Am. Ceram. Soc. 79 585-590
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