Simulation and investigation of a bipolar transistor with transfer N-shaped current-voltage characteristic

被引:0
作者
Novikov S.G. [1 ]
Gurin N.T. [1 ]
Korneev I.V. [1 ]
机构
[1] Ulyanovsk State University, Ulyanovsk
关键词
Collector Current; Current Voltage Characteristic; RUSSIAN Microelectronics; Field Effect Transistor; Circuit Analog;
D O I
10.1134/S1063739711070146
中图分类号
学科分类号
摘要
The method of the implementation of built-in protection of bipolar transistors from the current overloads in the controlling circuit based on the combination of an element with an N-shaped IVC with the bipolar transistor is considered. The use of the given method makes it possible to create semiconductor structures of bipolar transistors with built-in protection against current overloads in the controlling circuit. © Pleiades Publishing, Ltd., 2011.
引用
收藏
页码:453 / 456
页数:3
相关论文
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[2]  
(2001)
[3]  
Chua L.O., Yu J., Yu Y., Bipolar-JFET-MOSFET negative resistance devices, IEEE Trans. Circ. Syst., 1, (1985)
[4]  
Sze S.M., Physics of Semiconductor Devices, (2002)
[5]  
Spiridonov N.S., Osnovy Teorii Tranzistorov, (1975)