Simulation and investigation of a bipolar transistor with transfer N-shaped current-voltage characteristic

被引：0

作者：

Novikov S.G. ^{[1
]}

Gurin N.T. ^{[1
]}

Korneev I.V. ^{[1
]}

机构：

[1] Ulyanovsk State University, Ulyanovsk

来源：

Russian Microelectronics | 2011年 / 40卷 / 07期

关键词：

Collector Current; Current Voltage Characteristic; RUSSIAN Microelectronics; Field Effect Transistor; Circuit Analog;

D O I：

10.1134/S1063739711070146

中图分类号：

学科分类号：

摘要：

The method of the implementation of built-in protection of bipolar transistors from the current overloads in the controlling circuit based on the combination of an element with an N-shaped IVC with the bipolar transistor is considered. The use of the given method makes it possible to create semiconductor structures of bipolar transistors with built-in protection against current overloads in the controlling circuit. © Pleiades Publishing, Ltd., 2011.

引用

页码：453 / 456

页数：3