The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

被引：0
作者：
N. V. Kryzhanovskaya
M. V. Lebedev
T. V. L’vova
Yu. V. Kudashova
I. I. Shostak
E. I. Moiseev
A. E. Zhukov
M. V. Maximov
M. M. Kulagina
A. M. Nadtochiy
S. I. Troshkov
A. A. Blokhin
M. A. Bobrov
机构：
[1] Russian Academy of Sciences,St. Petersburg Academic University—Nanotechnology Research and Education Center
[2] St. Petersburg State Polytechnic University,St. Petersburg Scientific Center
[3] Ioffe Physical Technical Institute Russian Academy of Sciences,undefined
[4] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2015年 / 41卷
关键词：
GaAs; Technical Physic Letter; Sodium Sulfide; GaAs Matrix; Surface Recombination Rate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten GaAs/AlAs quantum wells or by a sheet of InAs/In0.15Ga0.85As quantum dots. It is shown that passivation leads to a substantial rise in the photoluminescence intensity for mesa structures of all types.
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页码：654 / 657
页数：3
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