Features of the technology and properties of photodetectors based on metal-porous silicon carbide structures

Some technological aspects of the formation of UV photodetector structures based on gold-porous silicon carbide (Au-PSC) Schottky diodes are considered. The data of atomic force microscopy and ion microprobe measurements in the regimes of depth profiling and contrast formation show that the adopted technology yields PSC layers with a thickness of 230–250 nm, a well developed surface, and an average roughness size of 60–80 nm. A comparative analysis of the photoelectric properties of Au-SiC(6H) and Au-PSC diode structures shows that the latter exhibits a higher photosensitivity and somewhat different spectral characteristic.