Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

被引：0
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作者：
Caihong Jia
Yonghai Chen
Yan Guo
Xianglin Liu
Shaoyan Yang
Weifeng Zhang
Zhanguo Wang
机构：
[1] Institute of Semiconductors,Key Laboratory of Semiconductor Material Science
[2] Chinese Academy of Science,Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics Electronics
[3] Henan University,undefined
来源：
Nanoscale Research Letters | / 6卷
关键词：
Valence Band Maximum; Fermi Energy Level; Valence Band Offset; Conduction Band Offset; Ti2p Peak;
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摘要：
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
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