Peculiarities of Growth of InAs Quantum Dot Arrays with Low Surface Density by Molecular Beam Epitaxy

被引：0
|
作者：
S. A. Blokhin
A. P. Vasyl’ev
A. M. Nadtochy
N. D. Prasolov
V. N. Nevedomsky
M. A. Bobrov
A. A. Blokhin
A. G. Kuzmenkov
N. A. Maleev
V. M. Ustinov
机构：
[1] Ioffe Institute,
[2] Submicron Heterostructures for Microelectronics,undefined
[3] Research and Engineering Center,undefined
[4] Russian Academy of Sciences,undefined
[5] National Research University “Higher School of Economics”,undefined
来源：
Technical Physics Letters | 2023年 / 49卷
关键词：
molecular-beam epitaxy; quantum dots; surface density;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：S168 / S172
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