Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots

被引：0

作者：

V. V. Litvinov

A. N. Petukh

Yu. M. Pokotilo

机构：

来源：

Journal of Applied Spectroscopy | 1997年 / 64卷 / 5期

关键词：

oxygen; silicon; absorption; concentration; spectrometer;

D O I：

10.1007/BF02675331

中图分类号：

学科分类号：

摘要：

Spectral dependences of the coefficients of absorption by free carriers and of multiphoton absorption by a silicon lattice in the region of the interstitial oxygen band at 5.8 μm are established. A procedure for measurement of the distribution of oxygen and alloying impurities in silicon ingots is given. The effectiveness of the spectrometers developed for controlling the segregation of impurities and nonstationary convection of the silicon melt in growing ingots by the Czochralski method is shown.

引用

页码：668 / 672

页数：4

共 4 条

[1] Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots
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[2] Control of oxygen precipitates distribution in large-diameter silicon wafers after thermal annealing
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[4] Spectroscopic parameters of the absorption bands related to the local vibrational modes of carbon and oxygen impurities in silicon enriched with 28Si, 29Si, and 30Si isotopes
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B. A. Andreev
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