Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance

被引：0
作者：
A. V. Novak
机构：
[1] National Research University “MIET”,
来源：
Semiconductors | 2014年 / 48卷
关键词：
Thick Film; Deposition Temperature; Silicon Film; Lower Electrode; Monosilane;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of formation conditions on the morphology of silicon films with hemispherical grains (HSG-Si) obtained by the method of low-pressure chemical vapor deposition (LPCVD) is investigated by atomic-force microscopy. The formation conditions for HSG-Si films with a large surface area are found. The obtained HSG-Si films make it possible to fabricate capacitor structures, the electric capacitance of which is twice as large in comparison to that of capacitors with “smooth” electrodes from polycrystalline silicon.
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页码：1724 / 1728
页数：4
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