In-situ reflectance monitoring during MOCVD of AlGaN

被引：0
|
作者：
T. B. Ng
J. Han
R. M. Biefeld
M. V. Weckwerth
机构：
[1] Sandia National Laboratories,
[2] Star Medical Technologies,undefined
来源：
Journal of Electronic Materials | 1998年 / 27卷
关键词：
AlGaN; metalorganic chemical vapor deposition (MOCVD); reflectance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report in-situ optical reflectance monitoring during the metalorganic chemical vapor deposition (MOCVD) growth of (Al)GaN. In addition to the well-known thin film interference effect which enables a real-time determination of growth rate, we show that several insights about the MOCVD growth process can be gained by using this simple yet powerful technique. Illustrations from a variety of applications for in-situ reflectance monitoring, specifically the study of growth evolution, the control of alloy fractions, and the use of growth rate to gauge surface kinetics and gas injection will be reported.
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页码：190 / 195
页数：5
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