Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

被引：0

作者：

I. V. Shtrom

N. G. Filosofov

V. F. Agekian

M. B. Smirnov

A. Yu. Serov

R. R. Reznik

K. E. Kudryavtsev

G. E. Cirlin

机构：

[1] Russian Academy of Sciences,St. Petersburg Academic University

[2] Russian Academy of Sciences,Institute for Analytical Instrumentation

[3] St. Petersburg State University,undefined

[4] ITMO University,undefined

[5] Institute for Physics of Microstructures of the Russian Academy of Sciences,undefined

来源：

Semiconductors | 2018年 / 52卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

引用

页码：602 / 604

页数：2

共 50 条

[41] The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers [J].

Arslan, Engin ;

Duygulu, Oezguer ;

Kaya, Ali Arslan ;

Teke, Ali ;

Oezcelik, Sueleyman ;

Ozbay, Ekmel .

SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (06) :846-857

[42] Luminescence and morphological properties of GaN layers grown on SiC/Si(111) substrates [J].

Sánchez-García, MA ;

Ristic, J ;

Calleja, E ;

Perez-Rodriguez, A ;

Serre, C ;

Romano-Rodriguez, A ;

Morante, JR ;

Koegler, R ;

Skorupa, W ;

Trampert, A ;

Ploog, KH .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 192 (02) :401-406

[43] Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst [J].

Kuppulingam, B. ;

Baskar, K. .

EMERGENT MATERIALS, 2020, 3 (05) :591-594

[44] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE [J].

Tabata, Takuya ;

Paek, Jihyun ;

Honda, Yoshio ;

Yamaguchi, Masahito ;

Amano, Hiroshi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :646-649

[45] Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst [J].

B. Kuppulingam ;

K. Baskar .

Emergent Materials, 2020, 3 :591-594

[46] MBE-VLS growth of GaAs nanowires on (111)Si substrate [J].

Paek, J. H. ;

Nishiwaki, T. ;

Yamaguchi, M. ;

Sawaki, N. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :2740-2742

[47] GaN MESFETs on (111) Si substrate grown by MOCVD [J].

Egawa, T ;

Nakada, N ;

Ishikawa, H ;

Umeno, M .

ELECTRONICS LETTERS, 2000, 36 (21) :1816-1818

[48] The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate [J].

Engin Arslan ;

Mustafa K. Ozturk ;

Özgür Duygulu ;

Ali Arslan Kaya ;

Suleyman Ozcelik ;

Ekmel Ozbay .

Applied Physics A, 2009, 94 :73-82

[49] The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate [J].

Arslan, Engin ;

Ozturk, Mustafa K. ;

Duygulu, Oezguer ;

Kaya, Ali Arslan ;

Ozcelik, Suleyman ;

Ozbay, Ekmel .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (01) :73-82

[50] Analysis of HRTEM images of SiC/Si (111) grown by MBE technique [J].

Asghar, M. ;

Fatima, K. ;

Ul Ain, Noor ;

Tsu, R. ;

Mahmood, K. .

MATERIALS TODAY-PROCEEDINGS, 2015, 2 (10) :5808-5814

← 1 2 3 4 5 →