Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

被引：0

作者：

I. V. Shtrom

N. G. Filosofov

V. F. Agekian

M. B. Smirnov

A. Yu. Serov

R. R. Reznik

K. E. Kudryavtsev

G. E. Cirlin

机构：

[1] Russian Academy of Sciences,St. Petersburg Academic University

[2] Russian Academy of Sciences,Institute for Analytical Instrumentation

[3] St. Petersburg State University,undefined

[4] ITMO University,undefined

[5] Institute for Physics of Microstructures of the Russian Academy of Sciences,undefined

来源：

Semiconductors | 2018年 / 52卷

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学科分类号：

摘要：

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

引用

页码：602 / 604

页数：2

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