Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

被引：0

作者：

I. V. Shtrom

N. G. Filosofov

V. F. Agekian

M. B. Smirnov

A. Yu. Serov

R. R. Reznik

K. E. Kudryavtsev

G. E. Cirlin

机构：

[1] Russian Academy of Sciences,St. Petersburg Academic University

[2] Russian Academy of Sciences,Institute for Analytical Instrumentation

[3] St. Petersburg State University,undefined

[4] ITMO University,undefined

[5] Institute for Physics of Microstructures of the Russian Academy of Sciences,undefined

来源：

Semiconductors | 2018年 / 52卷

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学科分类号：

摘要：

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

引用

页码：602 / 604

页数：2

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[21] Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate [J].

Bondarenko, D. N. ;

Gridchin, V. O. ;

Kotlyar, K. P. ;

Reznik, R. R. ;

Kirilenko, D. A. ;

Baranov, A. I. ;

Dragunova, A. S. ;

Kryzhanovskaya, N. V. ;

Maksimova, A. A. ;

Cirlin, G. E. .

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2023, 16 (01) :179-184

[22] Optical properties of GaN films grown on SiC/Si [J].

Devrajan, J ;

Steckl, AJ ;

Tran, CA ;

Stall, RA .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1149-1152

[23] Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111) [J].

Seredin, P., V ;

Lenshin, A. S. ;

Mizerov, A. M. ;

Leiste, Harald ;

Rinke, Monika .

APPLIED SURFACE SCIENCE, 2019, 476 :1049-1060

[24] Optical properties of InN grown on Si(111) substrate [J].

Sakalauskas, E. ;

Schley, P. ;

Raethel, J. ;

Klar, T. A. ;

Mueller, R. ;

Pezoldt, J. ;

Tonisch, K. ;

Grandal, J. ;

Sanchez-Garcia, M. A. ;

Calleja, E. ;

Vilalta-Clemente, A. ;

Ruterana, P. ;

Goldhahn, R. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (05) :1066-1069

[25] Structural and Optical Properties of GaN Nanowires Formed on Si(111) [J].

Han, Sangmoon ;

Choi, Ilgyu ;

Song, Jihoon ;

Lee, Cheul-Ro ;

Cho, Il-Wook ;

Ryu, Mee-Yi ;

Kim, Jin Soo .

APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2018, 27 (05) :95-99

[26] MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate [J].

R. R. Reznik ;

K. P. Kotlyar ;

I. V. Shtrom ;

I. P. Soshnikov ;

S. A. Kukushkin ;

A. V. Osipov ;

G. E. Cirlin .

Semiconductors, 2017, 51 :1472-1476

[27] Morphological and optical characterization of GaN/AlN heterostructures grown on Si(111) substrates by MBE [J].

Rinaldi, R ;

Antonaci, S ;

Anni, M ;

Lomascolo, M ;

Cingolani, R ;

Botchkarev, A ;

Morkoc, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01) :701-706

[28] Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate [J].

Bondarenko, D. N. ;

Gridchin, V. O. ;

Kotlyar, K. P. ;

Baranov, A. I. ;

Maksimova, A. A. ;

Reznik, R. R. ;

Cirlin, G. E. .

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03) :281-284

[29] AlGaN/GaN HEMTs on resistive Si (111) substrate grown by gas-source MBE [J].

Cordier, Y ;

Semond, F ;

Massies, J ;

Dessertene, B ;

Cassette, S ;

Surrugue, M ;

Adam, D ;

Delage, SL .

ELECTRONICS LETTERS, 2002, 38 (02) :91-92

[30] Plasma-assisted MBE of GaN pn-junction Grown on Si (111) Substrate [J].

Yusoff, Mohd Zaki Mohd ;

Hassan, Zainuriah ;

Woei, Chin Che ;

Abu Hassan, Haslan .

CHINESE JOURNAL OF CHEMICAL PHYSICS, 2010, 23 (04) :431-436

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