Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

被引：0

作者：

Yu. V. Trushin

E. E. Zhurkin

K. L. Safonov

A. A. Schmidt

V. S. Kharlamov

S. A. Korolev

M. N. Lubov

J. Pezoldt

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

[2] St. Petersburg State Technical University,Zentrum für Mikro

[3] TU Ilmenau,und Nanotechnologien

来源：

Technical Physics Letters | 2004年 / 30卷

关键词：

Silicon; Carbide; Silicon Carbide; Silicon Substrate; Molecular Beam Epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The growth of silicon carbide (SiC) nanoclusters by molecular beam epitaxy on silicon substrates has been studied using a combination of experimental and theoretical methods. The first results concerning the initial stages of this growth are presented.

引用

页码：641 / 643

页数：2

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