Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

被引：0
作者：
Yu. V. Trushin
E. E. Zhurkin
K. L. Safonov
A. A. Schmidt
V. S. Kharlamov
S. A. Korolev
M. N. Lubov
J. Pezoldt
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,Zentrum für Mikro
[3] TU Ilmenau,und Nanotechnologien
来源：
Technical Physics Letters | 2004年 / 30卷
关键词：
Silicon; Carbide; Silicon Carbide; Silicon Substrate; Molecular Beam Epitaxy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The growth of silicon carbide (SiC) nanoclusters by molecular beam epitaxy on silicon substrates has been studied using a combination of experimental and theoretical methods. The first results concerning the initial stages of this growth are presented.
引用
收藏
页码：641 / 643
页数：2
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