Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices

被引：2

作者：

Gorlov M.I. ^{[1
]}

Litvinenko D.A. ^{[1
]}

机构：

[1] Voronezh State Technical University, Voronezh

来源：

Russian Microelectronics | 2002年 / 31卷 / 5期

关键词：

Radiation; Semiconductor Device;

D O I：

10.1023/A:1020286908612

中图分类号：

学科分类号：

摘要：

Categories and mechanisms of radiation-damage annealing in semiconductor devices are discussed. The annealing of electrostatic-discharge damages, a phenomenon discovered by the authors, is investigated experimentally. It is shown that methods for annealing the latter damages can be categorized in the same way.

引用

页码：295 / 304

页数：9

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