Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

被引：0
|
作者：
D. A. Vinokurov
D. N. Nikolaev
N. A. Pikhtin
A. L. Stankevich
V. V. Shamakhov
A. D. Bondarev
N. A. Rudova
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physical
来源：
Semiconductors | 2011年 / 45卷
关键词：
GaAs; Quantum Well; GaAs Substrate; Metal Organic Chemical Vapor Deposition; Threshold Current Density;
D O I：
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中图分类号：
学科分类号：
摘要：
Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 μm aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.
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页码：1227 / 1230
页数：3
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