Electronic structure and chemical bonding of zirconium disulfide

被引:0
|
作者
Yang -Soo Kim
Hyun -Chul Ko
Hwa -Soo Park
机构
[1] Shikoku National Industrial Research Institute,Department of Metallurgical and Materials Engineering
[2] NEC Corporation Kansai Electronics Research Laboratory,undefined
[3] Kookmin University,undefined
来源
Metals and Materials | 2000年 / 6卷
关键词
cluster calculation; discrete-variational-Xα method; electronic states; chemical bonding;
D O I
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中图分类号
学科分类号
摘要
This paper involves the carrying out of the first-principle molecular-orbital calculations for ZrS2 with a model cluster composed of 129 atoms. The nature and intensity of intra- and interlayer chemical bondings are also investigated by use of the bond overlap population. The valence band structure produced by this calculation agrees well with experimental results reported from X-ray photoelectron spectroscopy. Each peak in the density of states (DOS) is identified from the viewpoint of chemical bonding. There is a strong tendency toward covalent bonding between zirconium and sulfur atoms. The bonding energy between inter-layer S-S and intralayer S-S and Zr-Zr was much weaker than that between the Zr-S intra-layer bonding.
引用
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页码:177 / 180
页数:3
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