Features of Fermi-level pinning at the interface of Al0.3Ga0.7As with anodic oxide and stabilized zirconia

In the metal-oxide-semiconductor structures based on the Al0.3Ga0.7As films prepared by metal-organic epitaxy, Fermi-level pinning at the Al0.3Ga0.7As/oxide interface at a distance of 1.1 eV from the top of the Al0.3Ga0.7As conduction band was observed. In these structures, a long-term memory phenomenon was found that was caused by the inflow of electrons from Al0.3Ga0.7As to the anodic oxide and their capture by deep traps. The reversible change in the states of the structures due to this memory effect under the action of an electric field or light was observed.