Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces

被引：0
|
作者：
G. Ranga Rao
机构：
[1] Indian Institute of Technology Madras,Department of Chemistry
来源：
Bulletin of Materials Science | 2004年 / 27卷
关键词：
IR; Si(100); water adsorption;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Water adsorption on clean and hydrogenated Si(100) surfaces was studied under ultra high vacuum conditions using surface infrared spectroscopy. The study shows that H-Si-Si-OH and SiH2 species are formed on Si(100)-(2 × 1) and Si(100)-(2 × 1)-H surfaces, respectively. The reactivity behaviour of Si(100)-(3 × 1)-H and Si(100)-(1 × 1)-H is similar, both stabilizing oxygen inserted silicon dihydrides.
引用
收藏
页码：497 / 500
页数：3
相关论文
共 50 条
  • [1] Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces
    Rao, GR
    BULLETIN OF MATERIALS SCIENCE, 2004, 27 (06) : 497 - 500
  • [2] Infrared and Raman study of H-terminated Si(100) surfaces produced by etching solutions
    Miyata, N
    Watanabe, S
    Okamura, S
    APPLIED SURFACE SCIENCE, 1997, 117 : 26 - 31
  • [3] Diffusion mechanisms of a Si adatom on H-terminated Si(100) surfaces
    Jeong, S
    Oshiyama, A
    PHYSICAL REVIEW B, 1998, 58 (19): : 12958 - 12963
  • [4] Initial stages of Ni reaction on Si(100) and H-terminated Si(100) surfaces
    Yoshimura, M
    Ono, I
    Ueda, K
    APPLIED SURFACE SCIENCE, 1998, 130 : 276 - 281
  • [5] Deposition and diffusion of a single Si adatom on H-terminated Si (100) surfaces
    Huang, XJ
    Zhu, XY
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 847 - 850
  • [6] Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
    Ikeda, H
    Hotta, K
    Furuta, S
    Zaima, S
    Yasuda, Y
    APPLIED SURFACE SCIENCE, 1996, 104 : 354 - 358
  • [7] Silicon epitaxy epitaxy on H-terminated Si (100) surfaces at 250°C
    Deng, Xiao
    Namboodiri, Pradeep
    Li, Kai
    Wang, Xiqiao
    Stan, Gheorghe
    Myers, Alline F.
    Cheng, Xinbin
    Li, Tongbao
    Silver, Richard M.
    APPLIED SURFACE SCIENCE, 2016, 378 : 301 - 307
  • [8] REACTION OF H-TERMINATED SI (100) SURFACES WITH OXIDIZER IN THE HEATING AND COOLING PROCESS
    YABUMOTO, N
    KOMINE, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (07) : 770 - 773
  • [9] Diffusion of Si adatoms on H-terminated Si(001) surfaces
    Ohno, T
    Nara, J
    Sasaki, T
    MICROSCOPIC SIMULATION OF INTERFACIAL PHENOMENA IN SOLIDS AND LIQUIDS, 1998, 492 : 275 - 280
  • [10] STUDIES ON H-TERMINATED SI(100) SURFACES BY 2ND-HARMONIC GENERATION
    JIANG, HB
    LIU, YH
    LU, XZ
    WANG, WC
    ZHENG, JB
    ZHANG, ZM
    PHYSICAL REVIEW B, 1994, 50 (19): : 14621 - 14623
12345