Threshold behavior of phase transition characteristics in germanium telluride glasses doped with Ag

被引:0
|
作者
Jin Hwan Jeong
Hyung Keun Kim
Doo Jin Choi
机构
[1] Yonsei University,Department of Material Science and Engineering
来源
Journal of Materials Science | 2013年 / 48卷
关键词
Crystallization Temperature; High Resolution Transmission Electron Microscopy; GeTe; Phase Change Material; Optical Contrast;
D O I
暂无
中图分类号
学科分类号
摘要
In this article, the overall phase transition behavior of a Ge–Te–Ag system prepared by co-sputtering Ag and pure GeTe was investigated over a wide Ag composition (0–39.3 mol%). Crystallization temperature was determined through an electrical resistance analysis. The crystalline phase was analyzed with X-ray diffraction measurement, selected area electron diffraction patterns, and high resolution transmission electron microscopy to study the effects of Ag incorporation into GeTe. Optical static tests were conducted to measure the energy of crystallization, and a crystallization kinetics study was also performed using the Johnson–Mehl–Avrami model. Optical band gap was also measured using a UV–Vis–NIR spectrophotometer. We found that the system displayed a compositional threshold behavior, wherein crystallization temperature first decreased with increasing Ag content and then increased with further increases in Ag content. Crystallization kinetics and crystallinity also showed the compositional threshold behaviors at the critical Ag composition. From understanding of the origin of these results, we expect this research to provide a means of manipulating intrinsic characteristics of phase change materials to achieve targeted performance.
引用
收藏
页码:6167 / 6176
页数:9
相关论文
共 6 条
  • [1] Electronic control of Germanium Telluride (GeTe) phase transition for electronic memory applications
    Gwin, Alex H.
    Coutu, Ronald A., Jr.
    OXIDE-BASED MATERIALS AND DEVICES VI, 2015, 9364
  • [2] Study of the ferroelectric phase transition in germanium telluride using time-domain terahertz spectroscopy
    Kadlec, Filip
    Kadlec, Christelle
    Kuzel, Petr
    Petzelt, Jan
    PHYSICAL REVIEW B, 2011, 84 (20):
  • [3] Low-Power Switching through Disorder and Carrier Localization in Bismuth-Doped Germanium Telluride Phase Change Memory Nanowires
    Modi, Gaurav
    Stach, Eric A.
    Agarwal, Ritesh
    ACS NANO, 2020, 14 (02) : 2162 - 2171
  • [4] Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications
    Seung Yun Lee
    Hyung Keun Kim
    Jin Hyock Kim
    Jae Sung Roh
    Doo Jin Choi
    Journal of Materials Science, 2009, 44 : 4354 - 4359
  • [5] Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications
    Lee, Seung Yun
    Kim, Hyung Keun
    Kim, Jin Hyock
    Roh, Jae Sung
    Choi, Doo Jin
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (16) : 4354 - 4359
  • [6] Phase transition characteristics and device performance of Sn-doped Ge2Sb2Te5 in phase change random access memory
    Park, Tae Jin
    Kim, Dae Hyun
    Yoon, Sung Min
    Choi, Kyu Jeong
    Lee, Nam Yeal
    Yu, Byoung Gon
    Choi, Se Young
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (46-50): : L1273 - L1276