Role of Intermediate Metal and Oxide Layers in Change of Adhesion Properties of TiAl/Al2O3 Interface

被引:0
|
作者
A. V. Bakulin
S. Hocker
S. E. Kulkova
机构
[1] Institute of Strength Physics and Materials Science,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] Institute for Materials Testing,undefined
[5] Materials Science and Strength of Materials,undefined
[6] University of Stuttgart,undefined
[7] National Research Tomsk State University,undefined
来源
Physical Mesomechanics | 2021年 / 24卷
关键词
interface; adhesion; titanium aluminides; electronic structure; first principles calculations; chemical bonding;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:523 / 532
页数:9
相关论文
共 50 条
  • [1] Role of Intermediate Metal and Oxide Layers in Change of Adhesion Properties of TiAl/Al2O3 Interface
    Bakulin, A., V
    Hocker, S.
    Kulkova, S. E.
    PHYSICAL MESOMECHANICS, 2021, 24 (05) : 523 - 532
  • [2] Influence of Impurities on Adhesion at the TiAl/Al2O3 Interface
    A. V. Bakulin
    A. S. Kulkov
    S. E. Kulkova
    Journal of Experimental and Theoretical Physics, 2023, 137 : 362 - 371
  • [3] Influence of Impurities on Adhesion at the TiAl/Al2O3 Interface
    Bakulin, A. V.
    Kulkov, A. S.
    Kulkova, S. E.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2023, 137 (03) : 362 - 371
  • [4] Influence of Metallic and Oxide Intermediate Layers on Adhesive Properties of Ti3Al/Al2O3 Interface
    Bakulin, A. V.
    Kulkov, S. S.
    Kulkova, S. E.
    RUSSIAN PHYSICS JOURNAL, 2021, 64 (04) : 590 - 598
  • [5] Influence of Metallic and Oxide Intermediate Layers on Adhesive Properties of Ti3Al/Al2O3 Interface
    A. V. Bakulin
    S. S. Kulkov
    S. E. Kulkova
    Russian Physics Journal, 2021, 64 : 590 - 598
  • [6] Adhesive Properties of the TiAl/Al2O3 Interface
    A. V. Bakulin
    S. S. Kulkov
    S. E. Kulkova
    Russian Physics Journal, 2020, 63 : 713 - 720
  • [7] Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties
    Yokoyama, Masafumi
    Yokoyama, Haruki
    Takenaka, Mitsuru
    Takagi, Shinichi
    APPLIED PHYSICS LETTERS, 2015, 106 (12)
  • [8] Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties
    Yokoyama, Masafumi
    Asakura, Yuji
    Yokoyama, Haruki
    Takenaka, Mitsuru
    Takagi, Shinichi
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [9] The connection between ab initio calculations and interface adhesion measurements on metal/oxide systems:: Ni/Al2O3 and Cu/Al2O3
    Zhang, W
    Smith, JR
    Evans, AG
    ACTA MATERIALIA, 2002, 50 (15) : 3803 - 3816
  • [10] New routes for improving adhesion at the metal/α-Al2O3(0001) interface
    Cavallotti, Remi
    Ha-Linh Thi Le
    Goniakowski, Jacek
    Lazzari, Remi
    Jupille, Jacques
    Koltsov, Alexey
    Loison, Didier
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (04) : 3032 - 3039