Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem

被引：0

作者：

I. D. Loshkarev

E. M. Trukhanov

K. N. Romanyuk

M. M. Kachanova

机构：

[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2012年 / 76卷 / 3期

关键词：

Interphase Boundary; Misfit Dislocation; Plastic Relaxation; Misfit Stress; Inter Phase Boundary;

D O I：

10.3103/S1062873812030185

中图分类号：

学科分类号：

摘要：

A model for determining the critical thickness of a film hc is developed to introduce misfit dislocations in the slip planes of a film and a substrate parallel to the interphase boundary (111). Experimental values hc that agree with calculated values are determined for the Ge/Si(111) and Si3N4/Ge(111) heterosystems. The two-level epitaxial growth of Ge on Si is attained in the regime of combining the step-layer and 2D island growth mechanisms.

引用

页码：374 / 377

页数：3