Effect of doping Gd2O3 on dielectric and piezoelectric properties of BaZr0.1Ti0.9O3 ceramics by sol-gel method

被引：20

作者：

Kang, Wenshuo ^{[1
]}

Zheng, Zhanshen ^{[1
]}

Li, Yuanliang ^{[1
]}

Zhao, Rujie ^{[1
]}

Dun, Wenxin ^{[1
]}

Wang, Yufan ^{[1
]}

机构：

[1] North China Univ Sci & Technol, Coll Mat Sci & Engn, Hebei Prov Key Lab Inorgan Nonmetall Mat, Key Lab Environm Funct Mat Tangshan City, Tangshan 063210, Hebei, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 03期

基金：

中国国家自然科学基金;

关键词：

LEAD-FREE; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; TEMPERATURE; CUO;

D O I：

10.1007/s10854-018-0550-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O-3+xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 degrees C and doped with gadolinium ions of 0.5mol% has uniform grain size and compact morphology. And the sample(1350 degrees C0.5mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.

引用

页码：2743 / 2749

页数：7

共 33 条

[1] Phase formation and dielectric study of Bi doped BaTi0.75Zr0.25O3 ceramic [J].