Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

This article presents a self-consistent 3D Poisson-Schrödinger calculation based on the density functional theory for silicon quantum dot under bias voltage. For various shapes and sizes of quantum dot surrounded by silicon dioxide, the energy levels and density are calculated as a function of the applied voltage and the number of stored electrons. The potential properties of such nanostructures for Coulomb blockade operation are deduced.