Low-temperature production of silicon carbide films of different polytypes

The study is concerned with the effect of temperature on the structure of SiC films formed by deposition of the C and Si ions with the energy 120 eV. On the basis of the X-ray structural studies, it is unambiguously established that the structure of the growing polytype is finely dependent on the substrate temperature. In the temperature range from 1080°C to 1510°C, the sequence of films involving the 21R, 51R, 27R, and 6H polytypes is produced for the first time. The effect of temperature on the silicon-carbon atomic content ratio [Si]/[C] in the deposited films is determined. At optimized parameters of deposition the film structured as the 51R rhombohedral polytype is grown.