Preparation of Germanium Oxynitride Films in Ammonia

被引:0
作者
I. G. Nakhutsrishvili
D. A. Dzhishiashvili
Z. I. Mkervalishvili
机构
[1] Institute of Cybernetics,
[2] Academy of Sciences of Georgia,undefined
来源
Inorganic Materials | 2003年 / 39卷
关键词
Ammonia; Inorganic Chemistry; Water Vapor; Nitride; Germanium;
D O I
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中图分类号
学科分类号
摘要
The surface reaction of single-crystal germanium with ammonia was studied by microgravimetry. The results indicate that the forming germanium nitride vaporizes and then deposits in the form of germanium oxynitride on a substrate located in the cold zone of the reactor. The formation of the oxynitride film is due to the presence of small amounts of water vapor in ammonia.
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页码:833 / 835
页数:2
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