Preparation of Germanium Oxynitride Films in Ammonia

被引：0

作者：

I. G. Nakhutsrishvili

D. A. Dzhishiashvili

Z. I. Mkervalishvili

机构：

[1] Institute of Cybernetics,

[2] Academy of Sciences of Georgia,undefined

来源：

Inorganic Materials | 2003年 / 39卷

关键词：

Ammonia; Inorganic Chemistry; Water Vapor; Nitride; Germanium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The surface reaction of single-crystal germanium with ammonia was studied by microgravimetry. The results indicate that the forming germanium nitride vaporizes and then deposits in the form of germanium oxynitride on a substrate located in the cold zone of the reactor. The formation of the oxynitride film is due to the presence of small amounts of water vapor in ammonia.

引用

页码：833 / 835

页数：2

共 19 条

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