Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction

[1] Murawski K(2019)Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates Prog. Nat. Sci. Mater. Int. 29 472-476

[2] Li Q(2015)Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon Appl. Phys. Lett. 148 25-30

[3] Ng KW(1995)Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates J. Cryst. Growth 15 34-171

[4] Lau KM(2000)Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb Semicond. Sci. Technol. 7 035901-435

[5] Giani A(2020)Relaxation and tilting of single and double layer structures of AlGaSb/GaSb-LPE studied by high resolution x-ray diffraction Mater. Res. Express 17 164-242

[6] Podlecki J(2021)Effects of Se Doping on Thermoelectric Properties of Tetrahedrite Cu12Sb4S13−zSez Electronic Materials Letters 17 427-4225

[7] Pascal-Delannoy F(2021)Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4 Electronic Materials Letters 166 239-2088

[8] Bougnot G(2016)Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps Mater. Lett. 93 4219-3794

[9] Gouskov L(2003)Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy J. Appl. Phys. 643 012006-440

[10] Catinaud C(2006)InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers J. Phys. Conf. Ser. 312 2083-8370

[1] Murawski K(2019)Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates Prog. Nat. Sci. Mater. Int. 29 472-476

[2] Li Q(2015)Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon Appl. Phys. Lett. 148 25-30

[3] Ng KW(1995)Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates J. Cryst. Growth 15 34-171

[4] Lau KM(2000)Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb Semicond. Sci. Technol. 7 035901-435

[5] Giani A(2020)Relaxation and tilting of single and double layer structures of AlGaSb/GaSb-LPE studied by high resolution x-ray diffraction Mater. Res. Express 17 164-242

[6] Podlecki J(2021)Effects of Se Doping on Thermoelectric Properties of Tetrahedrite Cu12Sb4S13−zSez Electronic Materials Letters 17 427-4225

[7] Pascal-Delannoy F(2021)Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4 Electronic Materials Letters 166 239-2088

[8] Bougnot G(2016)Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps Mater. Lett. 93 4219-3794

[9] Gouskov L(2003)Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy J. Appl. Phys. 643 012006-440

[10] Catinaud C(2006)InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers J. Phys. Conf. Ser. 312 2083-8370