Generation of color centers when annealing LiF crystals irradiated by Kr ions with an energy of 150 MeV

被引：1
|
作者：
Akilbekov A.T. [1 ]
Russakova A.V. [1 ]
Dauletbekova A.K. [1 ]
Koloberdin M.V. [1 ]
Baijumanov M.Z. [1 ]
Zdorovets M.V. [2 ]
机构：
[1] Gumilyov Eurasian National University
[2] Institute of Nuclear Physics, Kazakhstan Atomic Energy Committee, Astana Branch
来源：
Bulletin of the Russian Academy of Sciences: Physics | 1600年 / Allerton Press Incorporation卷 / 78期
关键词：
Thermal Annealing; Kazakhstan; Color Center; Aggre Gate; Frenkel Pair;
D O I：
10.3103/S1062873814060045
中图分类号：
学科分类号：
摘要：
The effect thermal annealing has on F and F n centers in LiF crystals irradiated by Kr ions with an energy of 150 MeV is studied with allowance for fluence and ionic currents. It is found that annealing at a temperature of 400 K using crystals irradiated at a fluence of ≥10 13 iom/cm2 reduces the concentration of F centers (due to annihilation with H centers) and raises the concentration of complex F n centers. © 2014 Allerton Press, Inc.
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页码：535 / 539
页数：4
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