Electrodeposition of Si–DLC nanocomposite film and its electronic application

被引:0
作者
Necati Basman
Rukiye Uzun
Ebru Gocer
Emin Bacaksiz
Ugur Kolemen
机构
[1] Bulent Ecevit University,Department of Electrical and Electronics Engineering
[2] Gaziosmanpasa University,Department of Physics
[3] Karadeniz Technical University,Deparment of Physics
来源
Microsystem Technologies | 2018年 / 24卷
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摘要
In this study, a silicon doped diamond-like carbon (DLC) nanocomposite film was deposited electrochemically and it was used to fabricate an Ag/Si–DLC/p-Si metal–interlayer–semiconductor (MIS) Schottky diode. Methanol (CH3OH) was used as carbon and tetraethoxysilane (Si(OC2H5)4) as Si source, respectively. Morphology of the film was observed by scanning electron microscopy and continuous surface with numerous lumps spread randomly was observed. Structural and chemical composition analyses of the film were carried out by Raman and X-ray photoelectron spectroscopy. Typical D and G bands of DLC films were not observed in the Raman spectrum due to abundance of Si–C bonds. Silicon incorporation promoted the film deposition and increased sp3 bonds in the film. Current–Voltage (I–V) measurement was conducted to obtain parameters of the MIS diode. The diode exhibited a good rectifier behavior with ~ 103 rectification ratio. In the forward bias semi-logarithmic I–V plot, two linear regions with different slopes were observed. Such behavior was modelled by two parallel diodes and attributed to different conduction mechanism. The main electrical parameters, such as barrier height, ideality factor and series resistance were calculated by I–V and Cheung–Cheung methods. The Si–DLC nanocomposite film acted as barrier height modifier in the MIS diode.
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页码:2287 / 2294
页数:7
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[41]  
Sumranjit J(2005)Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities Diam Relat Mater 14 23-335
[42]  
Duffy DJ(2011)Evaluation of corrosion resistance of diamond-like carbon films deposited onto AISI 4340 steel J Mater Sci 46 1136-228
[43]  
Long DP(2010)Stiffness properties of porous silicon nanowires fabricated by electrochemical and laser-induced etching Electrochem Commun 12 61-22
[44]  
Lazorcik JL(2010)The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films Thin Solid Films 518 3332-3901
[45]  
Raboin L(2004)New optical features to enhance solar cell performance based on porous silicon surfaces Carbon 42 3103-undefined
[46]  
Kearns JK(2004)Diamond-like carbon Electrochem Commun 6 1159-undefined
[47]  
Smulligan SL(2004)Modeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin films Appl Surf Sci 236 328-undefined
[48]  
Babyak JM(2009)Fabrication and characterization of hydrothermally grown MgZnO nanorod films for Schottky diode applications Tribol Lett 34 223-undefined
[49]  
Caschera D(2014)Relation between physical structure and electrical properties of diamond-like carbon thin films Diam Relat Mater 43 12-undefined
[50]  
Federici F(2008)Direct hydrothermal electrochemical preparation of diamond-like carbon films on substrates Appl Surf Sci 254 3896-undefined