Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles

被引：0

作者：

V. V. Kozlovski

A. E. Vasil’ev

V. V. Emtsev

G. A. Oganesyan

A. A. Lebedev

机构：

[1] Peter the Great St. Petersburg Polytechnic University,

[2] Ioffe Physical–Technical Institute,undefined

[3] Russian Academy of Sciences,undefined

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2019年 / 13卷

关键词：

proton irradiation; radiation-induced defect; fluence of electrons; silicon carbide; silicon; absorbed radiation dose;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1155 / 1159

页数：4

共 38 条

[1] Strel’chuk A. M.(1999)Particle Data Group Mater. Sci. Engin B 61–62 441-undefined
[2] Kozlovski V. V.(2004)undefined Semiconductors 38 807-undefined
[3] Savkina N. S.(2015)undefined J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 9 231-undefined
[4] Strokan N. B.(2004)undefined Appl. Phys. Lett. 85 3780-undefined
[5] Ivanov A. M.(2000)undefined Semiconductors 34 861-undefined
[6] Savkina N. S.(2015)undefined IEEE Trans. Electron Devices 62 1964-undefined
[7] Kozlovski V. V.(2014)undefined J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 8 950-undefined
[8] Vasil’ev A. E.(2012)undefined Phys. Rev. D: Part., Fields, Gravitation, Cosmol. 86 010001-undefined
[9] Lebedev A. A.(1990)undefined Phys. Status Solidi A 117 85-undefined
[10] Castaldini A.(2001)undefined Physica B. Condens. Mat. 308 641-undefined