Microdefects induced by cavitation for gettering in silicon wafer

被引：0
作者：
Dan O. Macodiyo
Hitoshi Soyama
Takashi Masakawa
Kazuo Hayashi
机构：
[1] Tohoku University,Institute of Fluid Science
[2] Tohoku University,Department of Nanomechanics
来源：
Journal of Materials Science | 2006年 / 41卷
关键词：
Silicon Wafer; Dislocation Loop; Dislocation Misfit; Standoff Distance; Dislocation Dipole;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5380 / 5382
页数：2
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