Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

被引：5
作者：
An B.-S. [1 ]
机构：
[1] School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon
来源：
Applied Microscopy | 2019年 / 49卷 / 01期
关键词：
Crystallization; Electron beam irradiation; Ge-Sb-Te based chalcogenide; Transmission electron microscopy;
D O I：
10.1186/s42649-019-0021-5
中图分类号：
学科分类号：
摘要：
The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. © 2019, The Author(s).
引用
收藏
相关论文
共 50 条
  • [41] Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5
    Park, YJ
    Lee, JY
    Youm, MS
    Kim, YT
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1A): : 326 - 327
  • [42] Amorphous structure melt-quenched from defective Ge2Sb2Te5
    Sun, Zhimei
    JOURNAL OF MATERIALS SCIENCE, 2012, 47 (21) : 7635 - 7641
  • [43] Comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 films by an ultraviolet laser radiation and isothermal annealing
    Zhu, Z.
    Liu, F. R.
    Wang, Z. M.
    Fan, Z. K.
    Liu, F.
    Sun, N. X.
    APPLIED SURFACE SCIENCE, 2015, 335 : 184 - 188
  • [44] Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer
    Tseng, Ming Lun
    Chen, Bo Han
    Chu, Cheng Hung
    Chang, Chia Min
    Lin, Wei Chih
    Chu, Nien-Nan
    Mansuripur, Masud
    Liu, Ai Qun
    Tsai, Din Ping
    OPTICS EXPRESS, 2011, 19 (18): : 16975 - 16984
  • [45] Atomistic origins of the phase transition mechanism in Ge2Sb2Te5
    Da Silva, Juarez L. F.
    Walsh, Aron
    Wei, Su-Huai
    Lee, Hosun
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
  • [46] An experimental study of Ge diffusion through Ge2Sb2Te5
    Luong, Minh Anh
    Ran, Sijia
    Bernard, Mathieu
    Claverie, Alain
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 152
  • [47] New crystallization kinetics of phase change of Ge2Sb2Te5 at moderately elevated temperature
    An, SH
    Kim, DY
    Kim, SY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (12): : 7400 - 7401
  • [48] Double electrical percolation phenomenon during the crystallization of an amorphous Ge2Sb2Te5 thin film under continuous heating
    Choi, Yunjung
    Lee, Young-Kook
    APPLIED PHYSICS LETTERS, 2010, 96 (04)
  • [49] Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5
    Konstantinou, Konstantinos
    Mocanu, Felix C.
    Lee, Tae-Noon
    Elliott, Stephen R.
    NATURE COMMUNICATIONS, 2019, 10 (1)
  • [50] Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5 memory alloy
    Krbal, M.
    Kolobov, A. V.
    Fons, P.
    Tominaga, J.
    Elliott, S. R.
    Hegedus, J.
    Uruga, T.
    PHYSICAL REVIEW B, 2011, 83 (05):
12345