Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

被引：5
作者：
An B.-S. [1 ]
机构：
[1] School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon
来源：
Applied Microscopy | 2019年 / 49卷 / 01期
关键词：
Crystallization; Electron beam irradiation; Ge-Sb-Te based chalcogenide; Transmission electron microscopy;
D O I：
10.1186/s42649-019-0021-5
中图分类号：
学科分类号：
摘要：
The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. © 2019, The Author(s).
引用
收藏
相关论文
共 50 条
  • [31] Direct observation of structural transitions in the phase change material Ge2Sb2Te5
    Shao, Ruiwen
    Zheng, Kun
    Chen, Yongjin
    Zhang, Bin
    Deng, Qingsong
    Jiao, Lili
    Liao, Zhiming
    Zhang, Ze
    Zou, Jin
    Han, Xiaodong
    JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (39) : 9303 - 9309
  • [32] In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface
    Ren, Kun
    Cheng, Yan
    Xia, Mengjiao
    Lv, Shilong
    Song, Zhitang
    CERAMICS INTERNATIONAL, 2019, 45 (15) : 19542 - 19546
  • [33] Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy
    Carria, E.
    Mio, A. M.
    Gibilisco, S.
    Miritello, M.
    d'Acapito, F.
    Grimaldi, M. G.
    Rimini, E.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (12) : H480 - H482
  • [34] Structure and the mechanism of rapid phase change in amorphous Ge2Sb2Te5
    Takata, M.
    Tanaka, Y.
    Kato, K.
    Yoshida, F.
    Fukuyama, Y.
    Yasuda, N.
    Kohara, S.
    Osawa, H.
    Nakagawa, T.
    Kim, J.
    Murayama, H.
    Kimura, S.
    Kamioka, H.
    Moritomo, Y.
    Matsunaga, T.
    Kojima, R.
    Yamada, N.
    Toriumi, K.
    Ohshima, T.
    Tanaka, H.
    PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2009, 50 (03): : 205 - 211
  • [35] Influence of the exchange and correlation functional on the structure of amorphous Ge2Sb2Te5
    Caravati, Sebastiano
    Bernasconi, Marco
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (02): : 260 - 266
  • [36] Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation
    Zhang, Ke
    Li, Simian
    Liang, Guangfei
    Huang, Huan
    Wang, Yang
    Lai, Tianshu
    Wu, Yiqun
    PHYSICA B-CONDENSED MATTER, 2012, 407 (13) : 2447 - 2450
  • [37] Transmission electron microscopy study of amorphous Ge2Sb2Te5 films induced by an ultraviolet single-pulse laser
    Zhao, J. J.
    Liu, F. R.
    Han, X. X.
    Zhu, Z.
    Lin, X.
    Liu, F.
    Sun, N. X.
    APPLIED SURFACE SCIENCE, 2014, 311 : 83 - 88
  • [38] Film Thicknesses Influence on the Interfacial Thermal Resistances within Ge-Rich Ge2Sb2Te5/Ge2Sb2Te5 Multilayers
    Chassain, Clement
    Kusiak, Andrzej
    Gaborieau, Cecile
    Anguy, Yannick
    Tran, Nguyet-Phuong
    Sabbione, Chiara
    Cyrille, Marie-Claire
    Battaglia, Jean-Luc
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (12):
  • [39] Effect of Structural Change on Thermoelectric Properties of the Chalcogenide Ge2Sb2Te5 Thin Films
    Hong, Ji-Eun
    Yoon, Soon-Gil
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (10) : P298 - P301
  • [40] Nanoscale Crystallization of Phase Change Ge2Sb2Te5 Film with AFM Lithography
    Kim, JunHo
    SCANNING, 2010, 32 (05) : 320 - 326
12345