Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method

被引：0

作者：

A. A. Lebedev

V. Yu. Davydov

I. A. Eliseev

S. P. Lebedev

I. P. Nikitina

G. A. Oganesyan

A. N. Smirnov

L. V. Shakhov

机构：

[1] Ioffe Institute,

来源：

Semiconductors | 2023年 / 57卷

关键词：

SiC; heteroepitaxy; cubic silicon carbide; X-ray diffractometry; Hall effect; photoluminescence;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：121 / 124

页数：3

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