Characterization of exposure and processing of thick PMMA for deep x-ray lithography using hard x-rays

被引：13

作者：

De Carlo F. ^{[1
]}

Mancini D.C. ^{[1
]}

Lai B. ^{[1
]}

Song J.J. ^{[1
]}

机构：

[1] Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439

来源：

Microsystem Technologies | 1998年 / 4卷 / 2期

关键词：

Radiation; Polymer; Methyl; Microstructure; PMMA;

D O I：

10.1007/s005420050102

中图分类号：

学科分类号：

摘要：

The first step for the fabrication of microstructures using deep x-ray lithography (DXRL) is the radiation of a sensitive polymer like poly(methyl methacrylate) (PMMA) by hard x-ray. At the Advanced Photon Source a dedicated beamline1 allowed the proper exposure of very thick resist (several mm). In this work we give a characterization of the PMMA/development system. As a result the resist dissolution rate (μm/min) of the exposed PMMA in different developer is calculated. We also analyze the conditions that produce bubbles and cracks in the thick exposed resist and investigate the scanning parameters that reduce them.

引用

页码：86 / 88

页数：2