Inserting Different Charge Regions in Power MOSFET for Achieving High Performance of the Electrical Parameters

被引：0
作者：
Mahsa Mehrad
机构：
[1] Damghan University,School of Engineering
来源：
Silicon | 2021年 / 13卷
关键词：
Semiconductor devices; Power MOSFET; LDMOSFET; Breakdown voltage; On-resistance;
D O I：
暂无
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学科分类号：
摘要：
In this paper a new lateral double diffused MOSFET is proposed which has better performance compared to the conventional MOSFET. The idea is applied by inserting two silicon windows in drift region near the drain and under this region. The window in the drift region has higher doping density that leads to reducing the on-resistance as an important parameter in LDMOSFETs. The silicon window in buried layer has higher thermal conductivity than insulator which leads to reducing the self heating effect. Moreover, inserting the windows leads to increasing the breakdown voltage. Improving the parameters in the proposed structure causes better drain current.
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页码：1107 / 1111
页数：4
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