Fully on-chip switched capacitor NMOS low dropout voltage regulator

被引：0
作者：
Daniel Camacho
Ping Gui
Paulo Moreira
机构：
[1] Southern Methodist University,Department of Electrical Engineering
[2] CERN,undefined
来源：
Analog Integrated Circuits and Signal Processing | 2010年 / 65卷
关键词：
Gate overdrive; Low dropout voltage (LDO) regulator; NMOS pass transistor; Voltage control;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 μs. It is designed in a 0.13 μm CMOS process with an area of 0.008 mm2 and its operation does not require any external component.
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页码：141 / 149
页数：8
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  • [9] Mok PKT(undefined)undefined undefined undefined undefined-undefined
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