Space-charge-limited currents in a synthetic semiconducting diamond

被引：0
|
作者：
Yu. A. Detchuev
V. A. Kryachkov
É. G. Pel’
N. G. Sanzharlinskii
机构：
[1] All-Russia Research Institute for Synthesis of Mineral Raw Materials,Vereshchagin Institute of High
[2] Russian Academy of Sciences,Pressure Physics
来源：
Semiconductors | 2000年 / 34卷
关键词：
Electrical Property; Magnetic Material; Exponential Distribution; Electromagnetism; Carrier Trap;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties of single crystals of synthetic semiconducting diamonds of p-and n-types with B and As impurities were studied. The method of space-charge-limited currents revealed As-related monoenergetic carrier traps and traps with exponential distribution of the density of states. The possibility of using the crystals of a synthetic semiconducting diamond in alpha-particle detectors and temperature-sensitive elements is demonstrated.
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页码：1116 / 1119
页数：3
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