Piezoresistive effect in p-type polycrystalline diamond films

被引:0
|
作者
Liang Fang
Wanlu Wang
Peidao Ding
Kejun Liao
Jian Wang
机构
[1] Chongqing University,Department of Applied Physics College of Science
[2] College of Material Science & Engineering,Department of Material Science
来源
关键词
diamond films; piezoresistive effect; grain-boundary scattering; valence bands split-off;
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学科分类号
摘要
The piezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible for the piezoresistive effect in the p-type polycrystalline diamond films. The gauge-factor calculation formula including the effect of both background scattering and grain-boundary scattering were obtained, and the calculation results are in accordance with the experimental results.
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页码:769 / 777
页数:8
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