Silicon multiplexers for 1 × 576 HgCdTe IR focal-plane arrays

被引：1

作者：

Kozlov A.I. ^{[1
]}

Marchishin I.V. ^{[1
]}

Ovsyuk V.N. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

来源：

Russian Microelectronics | 2008年 / 37卷 / 4期

关键词：

85.60.Dw;

D O I：

10.1134/S1063739708040057

中图分类号：

学科分类号：

摘要：

Two versions of silicon 1D multiplexer for 1 × 576 IR focal-plane arrays are designed, fabricated, and tested. The version LM-1 employs a direct-injection input circuit; the version LM-2 contains a buffered direct-injection circuit. They are intended for use with HgCdTe n +-p photodiodes operating in the wavelength ranges 8-14 and 3-5 μm, the minimum reverse diode resistance being 200 kΩ. The multiplexers ensure high uniformity of photodiode bias voltage; they are provided with a switched storage capacitance, which allows operation at different signal, background, and dark currents. Clocked at 3.5 MHz, they have an integration time of 40 μs and can read out 25 full-size (768 × 576) frames per second. © 2008 MAIK Nauka.

引用

页码：245 / 252

页数：7