Gamma-irradiation-induced metastable states of undoped amorphous hydrogenated silicon

被引：0
作者：
M. S. Ablova
G. S. Kulikov
S. K. Persheev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2002年 / 36卷
关键词：
Silicon; Magnetic Material; Gamma Irradiation; Electromagnetism; Metastable State;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The conductivity of intrinsic amorphous hydrogenated silicon (a-Si:H) becomes higher upon gamma irradiation. This effect is due to an increase in the number of metastable D+ states in the mobility gap. At the same time, the conductivity of extrinsic (undoped) irradiated a-Si:H decreases. Most likely, gamma irradiation creates hydrogen-containing complexes in this material. The results obtained are discussed in comparison with the known data for B-or P-doped a-Si:H.
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页码：936 / 940
页数：4
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