Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs

被引：0

作者：

J. Xia

A. Mandelis

机构：

[1] University of Toronto,Center for Advanced Diffusion

来源：

The European Physical Journal Special Topics | 2008年 / 153卷

关键词：

GaAs; EUROPEAN Physical Journal Special Topic; Pulse Repetition Frequency; Deep Level Transient Spectroscopy; Free Carrier Concentration;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A purely optical Deep Level Photo-Thermal Spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-bandgap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a VGF grown SI-GaAs wafer, and the very first results are presented.

引用

页码：283 / 285

页数：2