Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 thin films

Bilayered ferroelectric thin films consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and (Bi3.15Nd0.85)Ti3O12 (BNT) have been successfully synthesized on Pt/Ti/SiO2/Si substrates, via a combined sol–gel and rf-sputtering route. Their ferroelectric and dielectric properties are critically dependent on the phases present, film texture and in particular layer and film thicknesses. Due to the coupling of PZT and BNT bilayers, there requires an optimized thickness combination of the two ferroelectric layers, in order to give rise to the wanted ferroelectric and dielectric properties, while the phenomenon can not be accounted for by the simple series connection model.