An Atomic Force Microscopic Study of Resistive Switching Resonance Activation in ZrO2(Y) Films

被引:0
|
作者
D. O. Filatov
D. A. Antonov
I. N. Antonov
M. A. Ryabova
O. N. Gorshkov
机构
[1] Lobachevsky National State University,
来源
Technical Physics | 2020年 / 65卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1744 / 1747
页数:3
相关论文
共 50 条
  • [11] Unipolar resistive switching of Au+-implanted ZrO2 films
    Liu Qi
    Long Shibing
    Guan Weihua
    Zhang Sen
    Liu Ming
    Chen Junning
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (04)
  • [12] Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films
    Kaerkkaenen, Irina
    Shkabko, Andrey
    Heikkila, Mikko
    Vehkamaki, Marko
    Niinisto, Jaakko
    Aslam, Nabeel
    Meuffels, Paul
    Ritala, Mikko
    Leskela, Markku
    Waser, Rainer
    Hoffmann-Eifert, Susanne
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (04): : 751 - 766
  • [13] Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles
    Filatov, D. O.
    Shenina, M. E.
    Rozhentsov, I. A.
    Koryazhkina, M. N.
    Novikov, A. S.
    Antonov, I. N.
    Ershov, A., V
    Gorshkov, A. P.
    Gorshkov, O. N.
    SEMICONDUCTORS, 2021, 55 (09) : 731 - 734
  • [14] Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles
    D. O. Filatov
    M. E. Shenina
    I. A. Rozhentsov
    M. N. Koryazhkina
    A. S. Novikov
    I. N. Antonov
    A. V. Ershov
    A. P. Gorshkov
    O. N. Gorshkov
    Semiconductors, 2021, 55 : 731 - 734
  • [15] Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution
    Parreira, Pedro
    McVitie, Stephen
    MacLaren, D. A.
    ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2013 (EMAG2013), 2014, 522
  • [16] Resistive switching memory effect of ZrO2 films with Zr+ implanted
    Liu, Qi
    Guan, Weihua
    Long, Shibing
    Jia, Rui
    Liu, Ming
    Chen, Junning
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [17] Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
    Lin, Chih-Yang
    Wang, Sheng-Yi
    Lee, Dai-Ying
    Tseng, Tseung-Yuen
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (08) : H615 - H619
  • [18] Engineering of forming-free resistive switching characteristics in ZrO2 films
    Du, Gang
    Li, Tao
    Wang, Chao
    Fang, Bin
    Zhang, Baoshun
    Zeng, Zhongming
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (22)
  • [19] Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stack
    Tang, Lin
    Maruyama, Hiraku
    Han, Taihao
    Nino, Juan C.
    Chen, Yonghong
    Zhang, Dou
    APPLIED SURFACE SCIENCE, 2020, 515 (515)
  • [20] Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films
    Li, Ying
    Zhao, Gaoyang
    Su, Jian
    Shen, Erfeng
    Ren, Yang
    BULLETIN OF MATERIALS SCIENCE, 2014, 37 (03) : 455 - 460