Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry

被引:0
作者
V. P. Evtikhiev
E. Yu. Kotel’nikov
I. V. Kudryashov
V. E. Tokranov
N. N. Faleev
机构
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源
Semiconductors | 1999年 / 33卷
关键词
Solid Solution; Magnetic Material; Laser Diode; Electromagnetism; Static Factor;
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中图分类号
学科分类号
摘要
The dependence of the degradation of high-power quantum-well GaAs/AlGaAs laser diodes, grown by molecular-beam epitaxy, on the crystal perfection of the individual layers of the heterostructure is investigated. The crystal perfection of the layers is estimated by highresolution x-ray spectrometry. A numerical fit of the diffraction-reflection curves is performed using the Debye-Waller static factor. It is shown that considerably higher crystal perfection of laser heterostructures can be obtained by using as the waveguide layers binary AlAs/GaAs superlattices instead of the solid solution AlGaAs.
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页码:590 / 593
页数:3
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